Our group utilizes a UHV Raman system which allows us to grow, functionalize and spectroscopically characterize a wide array of materials in UHV conditions at lHe temperatures. The UHV system consists of preparation, analysis and storage chambers, LEED and four laser lines (325nm, 488nm, 533nm and 633nm), which can be used to probe the Raman response and photoluminescence in-situ.
We operate a UHV system for the growth of epitaxial graphene, hexagonal boron nitride and transition metal dichalcogenides by chemical vapour deposition (CVD) and molecular beam epitaxy (MBE). The system is equipped with a four-pocket evaporator, a single-pocket evaporator, gas inlets, quartz microbalance, mass spec, sulphur cracker and sample heater. Samples can be transferred via a vacuum suitcase to the other setups for characterization by UHV Raman, PL or ARPES.