Our group utilizes a UHV Raman system which allows us to grow, functionalize and spectroscopically characterize a wide array of materials in UHV conditions at lHe temperatures. The UHV system consists of preparation, analysis and storage chambers, LEED and four laser lines (325nm, 488nm, 533nm and 633nm), which can be used to probe the Raman response and photoluminescence in-situ.
We operate a UHV system for the growth of epitaxial graphene, hexagonal boron nitride and transition metal dichalcogenides by chemical vapour deposition (CVD) and molecular beam epitaxy (MBE). The system is equipped with a four-pocket evaporator, a single-pocket evaporator, gas inlets, quartz microbalance, mass spec, sulphur cracker and sample heater. Samples can be transferred via a vacuum suitcase to the other setups for characterization by UHV Raman, PL or ARPES.
We have set up a modern angle-resolved photoemission spectroscopy (ARPES) system using a top-of-the-line MBS A1 analyzer for standard ARPES measurements in combination with a Focus spin detector for spin-resolved experiments. A Helium gas discharge lamp acts as the photon source for the setup allowing for measurements using the 21eV He-I-alpha line or the 42eV He-II-alpha line. Samples can be cooled to liquid Helium temperatures on our six-axis manipulator. The ultra high vacuum system also features a preparation chamber with a low energy electron diffraction (LEED) setup for sample preparation and characterization.