In this experiment the ambipolar mobility of Gallium Arsenide at room temperature is measured. Sub picosecond laser pulses are first characterized by measuring their duration via an optical autocorrelation. In the second part, pulses from the same source are employed to induce excitations at the surface of the GaAs sample and to observe their temporal evolution. From the lifetimes obtained in this way, diffusive contributions to the decay will be isolated and the ambipolar diffusivity and mobility can be extracted.

More detailed information on the experiment can be obtained from the tutor.